Installation type | Surface mount |
packing | TR,CT |
series | - |
Part status | On sale |
speed | No recovery time > 500mA(Io) |
working temperature | - |
Encapsulation/Housing | 4-PowerTSFN |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
Supplier device packaging | 4-PQFN(8x8) |
Diode type | SiC Schottky |
Voltage DC reverse (Vr) (maximum) | 650 V |
Current average rectification (Io) | 8A(DC) |
Voltage at different If - forward (Vf) | 1.75 V @ 6 A |
Reverse recovery time (trr) | 0 ns |
Current - reverse leakage at different Vr | 200 µA @ 650 V |
Capacitance at different Vr and F | 365pF @ 1V,100kHz |